دیتاشیت 2N3019
مشخصات دیتاشیت
نام دیتاشیت |
2N3019
|
حجم فایل |
47.214
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
4
|
مشخصات
-
Manufacturer:
STMicroelectronics
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
Transistor Type:
NPN
-
Current - Collector (Ic) (Max):
1A
-
Voltage - Collector Emitter Breakdown (Max):
80V
-
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
-
Current - Collector Cutoff (Max):
10nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
-
Power - Max:
800mW
-
Frequency - Transition:
100MHz
-
Operating Temperature:
175°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-205AD, TO-39-3 Metal Can
-
Supplier Device Package:
TO-39
-
Base Part Number:
2N30
-
detail:
Bipolar (BJT) Transistor NPN 80V 1A 100MHz 800mW Through Hole TO-39